SPU07N60C3 datasheet(1/12 Pages) INFINEON

Teilenummer	SPU07N60C3

Bauteilbeschribung	Cool MOS Power Transistor

PDF	12 Pages

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Hersteller	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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2003-09-16

Page 1

SPD07N60C3

SPU07N60C3

Final data

Cool MOS™ Power Transistor

VDS @ Tjmax

650

V

RDS(on)

0.6

Ω

ID

7.3

A

Feature

• New revolutionary high voltage technology

• Worldwide best RDS(on) in TO-251 and TO-252

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• High peak current capability

• Improved transconductance

P-TO252-3-1

P-TO251-3-1

Type

Package

Ordering Code

SPD07N60C3

P-TO252-3-1

Q67040-S4423

SPU07N60C3

P-TO251-3-1

-

Marking

07N60C3

Maximum Ratings

Parameter

Symbol

Value

Unit

Continuous drain current

TC = 25 °C

TC = 100 °C

ID

7.3

4.6

A

Pulsed drain current, tp limited by Tjmax

ID puls

21.9

Avalanche energy, single pulse

ID = 5.5 A, VDD = 50 V

EAS

230

mJ

Avalanche energy, repetitive tAR limited by Tjmax1)

ID = 7.3 A, VDD = 50 V

EAR

0.5

Avalanche current, repetitive tAR limited by Tjmax IAR

7.3

A

Reverse diode dv/dt

IS=7.3A, VDS=480V, Tj=125°C

dv/dt

6

V/ns

Gate source voltage static

VGS

±20

V

Gate source voltage AC (f >1Hz)

VGS

±30

Power dissipation, TC = 25°C

Ptot

83

W

Operating and storage temperature

Tj , Tstg

-55... +150

°C

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