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UT54ACTS20E Datenblatt(PDF) 2 Page - Aeroflex Circuit Technology

Teilenummer UT54ACTS20E
Bauteilbeschribung  Dual 4-Input NAND Gates
PDF  9 Pages
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Hersteller  AEROFLEX [Aeroflex Circuit Technology]
Direct Link  http://www.aeroflex.com
Logo AEROFLEX - Aeroflex Circuit Technology

UT54ACTS20E Datenblatt(HTML) 2 Page - Aeroflex Circuit Technology

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36-00-04-003
Ver. 1.0.0
Aeroflex Microelectronics Solutions - HiRel
OPERATIONAL ENVIRONMENT 1
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these
or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
2. Per MIL-STD-883, method 1012.1, Section 3.4.1, PD = (Tj(max) - Tc(max) ) / Θjc
RECOMMENDED OPERATING CONDITIONS
PARAMETER
LIMIT
UNITS
Total Dose
1.0E6
rads(Si)
SEU Threshold 2
108
MeV-cm2/mg
SEL Threshold
120
MeV-cm2/mg
Neutron Fluence
1.0E14
n/cm2
SYMBOL
PARAMETER
LIMIT
UNITS
VDD
Supply voltage
-0.3 to 7.0
V
VI/O
Voltage any pin
-0.3 to VDD + 0.3
V
TSTG
Storage Temperature range
-65 to +150
°C
TJ
Maximum junction temperature
+175
°C
TLS
Lead temperature (soldering 5 seconds)
+300
°C
Θ
JC
Thermal resistance junction to case
15.5
°C/W
II
DC input current
±10
mA
PD
2
Maximum package power dissipation
permitted @ Tc = +125oC
3.2
W
SYMBOL
PARAMETER
LIMIT
UNITS
VDD
Supply voltage
3.0 to 5.5
V
VIN
Input voltage any pin
0 to VDD
V
TC
Temperature range
-55 to +125
°C



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