TPS53353_16 datasheet(5/37 Pages) TI1

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TPS53353

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SLUSAK2C – AUGUST 2011 – REVISED FEBRUARY 2016

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For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report (SPRA953).

6.4 Thermal Information

THERMAL METRIC(1)

TPS53353

UNIT

DQP (LSON-CLIP)

22 PINS

θJA

Junction-to-ambient thermal resistance

27.2

°C/W

θJCtop

Junction-to-case (top) thermal resistance

17.1

θJB

Junction-to-board thermal resistance

5.9

ψJT

Junction-to-top characterization parameter

0.8

ψJB

Junction-to-board characterization parameter

5.8

θJCbot

Junction-to-case (bottom) thermal resistance

1.2

(1)

Ensured by design. Not production tested.

6.5 Electrical Characteristics

Over recommended free-air temperature range, VVDD= 12 V (unless otherwise noted)

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

SUPPLY CURRENT

VVIN

VIN pin power conversion input

voltage

1.5

VVDD

Supply input voltage

4.5

IVIN(leak)

VIN pin leakage current

VEN = 0 V

µA

IVDD

VDD supply current

TA = 25°C, No load, VEN = 5 V, VVFB = 0.630 V

420

590

µA

IVDDSDN

VDD shutdown current

TA = 25°C, No load, VEN = 0 V

µA

INTERNAL REFERENCE VOLTAGE

VVFB

VFB regulation voltage

CCM condition(1)

0.6

VVFB

VFB regulation voltage

TA = 25°C

0.597

0.6

0.603

0°C

≤ TA ≤ 85°C

0.5952

0.6

0.6048

–40°C

≤ TA ≤ 85°C

0.594

0.6

0.606

IVFB

VFB input current

VVFB = 0.630 V, TA = 25°C

0.01

0.2

µA

LDO OUTPUT

VVREG

LDO output voltage

0 mA

≤ IVREG ≤ 30 mA

4.77

5.36

IVREG

LDO output current(1)

Maximum current allowed from LDO

VDO

Low drop out voltage

VVDD = 4.5 V, IVREG = 30 mA

230

BOOT STRAP SWITCH

VFBST

Forward voltage

VVREG-VBST, IF = 10 mA, TA = 25°C

0.1

0.2

IVBSTLK

VBST leakage current

VVBST = 23 V, VSW = 17 V, TA = 25°C

0.01

1.5

µA

DUTY AND FREQUENCY CONTROL

tOFF(min)

Minimum off time

TA = 25°C

150

260

400

tON(min)

Minimum on time

VIN = 17 V, VOUT = 0.6 V, RRF = 39 kΩ,

TA = 25 °C

(1)

SOFT START

tSS

Internal soft-start time from

VOUT = 0 V to 95% of VOUT

RMODE = 39 kΩ

0.7

RMODE = 100 kΩ

1.4

RMODE = 200 kΩ

2.8

RMODE = 470 kΩ

5.6

INTERNAL MOSFETs

RDS(on)H

High-side MOSFET on-resistance

TA = 25 °C

5.5

RDS(on)L

Low-side MOSFET on-resistance

TA = 25 °C

2.2

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