GaAs SPDT Switch

DC - 2.5 GHz

Rev. V4

MASWSS0157

2

2

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2

2

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Insertion Loss

DC - 0.1 GHz

DC - 0.5 GHz

DC - 1.0 GHz

DC - 2.0 GHz

dB

—

—

—

—

0.4

0.4

0.5

0.6

—

—

0.8

—

Isolation

DC - 0.1 GHz

DC - 0.5 GHz

DC - 1.0 GHz

DC - 2.0 GHz

dB

—

—

30

—

56

43

33

24

—

—

—

—

VSWR

DC - 2.0 GHz

Ratio

—

1.4:1

—

Trise, Tfall

10% to 90% RF, 90% to 10% RF

ns

—

2

—

Ton, Toff

50% Control to 90% RF, 50% Control to 10% RF

ns

—

4

—

Transients

In-Band

mV

—

15

—

1 dB Compression Point

Input Power, 0.05 GHz

Input Power, 0.5 - 2.0 GHz

dBm

—

—

21

27

—

—

2nd Order Intercept

Measured Relative to Input Power

(for two-tone input power up to +6 dBm)

0.05 GHz

0.5 - 2.0 GHz

dBm

—

—

55

68

—

—

3rd Order Intercept

Measured Relative to Input Power

(for two-tone input power up to +6 dBm)

0.05 GHz

0.5 - 2.0 GHz

dBm

—

—

40

45

—

—

Control Current

½Vc½ = 5 V

µA

—

20

25

2. For positive voltage control, external DC blocking capacitors are required on all RF ports as well as the Ground ports which should be

pulled up to the positive voltage control level. (Refer to Application Note M521 - "Positive Voltage Control of GaAs MMIC Control Devices").

Control Inputs

Condition of Switch

RF Common to each RF Port

A

B

RF1

RF2

1

0

On

Off

0

1

Off

On

5. 0 = 0 V to -0.2 V, 1 = -5 V to -8 V

Parameter

Absolute Maximum

Input Power

0.05 GHz

0.5 - 2.0 GHz

+27 dBm

+34 dBm

Control Voltage

-8.5 V < Vc < +5 V

Operating Temperature

-40°C to +85°C

Storage Temperature

-65°C to +150°C

3. Exceeding any one or combination of these limits may cause

permanent damage to this device.

4. M/A-COM does not recommend sustained operation near

these survivability limits.