GaAs SPDT 2.7 V High Power Switch

DC - 3.0 GHz

Rev. V3

MASWSS0204

2

2

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2

3

3. For positive voltage control, external DC blocking capacitors are required on all RF ports.

4. Insertion loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 MHz - 1 GHz, 39 pF for 0.5 - 3 GHz.

Parameter

Test Conditions

Units

Min.

Typ.

Max.

DC - 1 GHz

1 - 2 GHz

2 - 3 GHz

dB

—

—

—

0.30

0.35

0.35

0.65

—

—

Isolation

DC - 1 GHz

1 - 2 GHz

2 - 3 GHz

dB

23

—

—

25

19

15

—

—

—

Return Loss

DC - 3 GHz

dB

—

20

—

IP3

825 MHz

Two Tone, +24 dBm Total Pin, 5 MHz Spacing

dBm

—

56

—

Cross Modulation

For Cell Band: Two-tone signal input:

dBm

—

-99

—

For PCS Band: Two-tone signal input:

dBm

—

-94

—

P0.1dB

1 GHz

dBm

—

38

—

Trise, Tfall

10% to 90% RF, 90% to 10% RF

ns

—

70

—

Ton, Toff

50% control to 90% RF,

50% control to 10% RF

ns

—

100

—

Transients

In Band

mV

—

25

—

Control Current

µA

—

5

20

7. For positive voltage control, external DC blocking capacitors

are required on all RF ports.

8. Differential voltage, V(state 1) - V(state 0), must be +2.7 V

minimum, but must not exceed 8.5 V.

9. 0 = -5 V to +2.3 V, 1 = -2.3 V to +5 V.

V1

V2

ANT– RF1

ANT - RF2

1

0

On

Off

0

1

Off

On

Parameter

Absolute Maximum

Input Power

(0.5 - 3 GHz, 3 V Control)

+38 dBm

Operating Voltage

+8.5 volts

Operating Temperature

-40°C to +85°C

Storage Temperature

-65°C to +150°C

5. Exceeding any one or combination of these limits may cause

permanent damage to this device.

6. M/A-COM Technology does not recommend sustained

operation near these survivability limits.