2SA1213 datasheet(1/2 Pages) DGNJDZ

Teilenummer	2SA1213

Bauteilbeschribung	SOT-89-3L Plastic-Encapsulate Transistors

PDF	2 Pages

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Hersteller	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

SOT-89-3L Plastic-Encapsulate Transistors

2SA1213

TRANSISTOR (PNP)

FEATURES

Complementary to 2SC2873

Small Flat Package

Power Amplifier and Switching Applications

Low Saturation Voltage

High Speed Switching Time

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC= -0.1mA,IE=0

-50

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-10mA,IB=0

-50

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-0.1mA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-50V,IE=0

-100

nA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-100

nA

VCE=-2V, IC=-500mA

70

240

DC current gain

hFE

VCE=-2V, IC=-2A

20

Collector-emitter saturation voltage

VCE(sat)

IC=-1A,IB=-50mA

-0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=-1A,IB=-50mA

-1.2

V

Collector output capacitance

Cob

VCB=-10V,IE=0, f=1MHz

40

pF

Transition frequency

fT

VCE=-2V,IC= -0.5A

100

MHz

CLASSIFICATION OF hFE

RANK

O

Y

RANGE

70–140

120–240

MARKING

NO

NY

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-50

V

VCEO

Collector-Emitter Voltage

-50

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current

-2

A

PC

Collector Power Dissipation

500

mW

RθJA

Thermal Resistance From Junction To Ambient

250

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

DONGGUAN NANJING ELECTRONICS LTD.,

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2SA1213 Datenblatt(PDF) 1 Page - Nanjing International Group Co

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