| Datenblatt-Suchmaschine für elektronische Bauteile |
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HTH40A80BW Datenblatt(PDF) 2 Page - SemiHow Co.,Ltd. |
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HTH40A80BW Datenblatt(HTML) 2 Page - SemiHow Co.,Ltd. |
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2 / 4 page ![]() ◎ SEMIHOW REV.A0,Jan 2016 Thermal Characteristics Electrical Characteristics (T C=25℃ unless otherwise specified ) Symbol Parameter Conditions Min Typ Max Unit I DRM Repetitive Peak Off-State Current V D = VDRM T C=25 oC - - 10 uA T C=125 oC - - 5 mA I RRM Repetitive Peak Reverse Current V D = VRRM T C=25 oC - - 10 uA T C=125 oC - - 5 mA I GT Gate Trigger Current V D = 12V, RL=33Ω 1+, 1-, 3- - - 50 mA V GT Gate Trigger Voltage V D = 12V, RL=33Ω 1+, 1-, 3- - - 1.3 V I L Latching Current I G = 1.2IGT 1+, 3- 80 mA 1- 100 mA I H Holding current I T= 0.1A - - 60 mA V GD Non-Trigger Gate Voltage V D = VDRM, RL=3.3kΩ, TJ=125 oC 0.2 - - V V TM Peak On-State Voltage I T = 60A, tp = 380us - - 1.55 V dv/dt Critical Rate of Rise of Off-State Voltage V D = 2/3 VDRM, TJ=125 oC 1000 - - V/us (dv/dt)c Critical Rate of Rise of Off-State Voltage at Communication Without snubber T J=125 oC 20 - - V/us Symbol Parameter Conditions Min Typ Max Unit RθJC Thermal Resistance Junction to Case 0.9 o C/W |
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