| Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC5772 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC5772 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 10 page ![]() INCHANGE Semiconductor isc RF Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN RF Transistor 2SC5772 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 15 V ICBO Collector Cutoff Current VCB= 12V; IE= 0 1 μ A ICEO Collector Cutoff Current VCE= 9V; RBE= ∞ 1 mA IEBO Emitter Cutoff Current VEB= 1.5V; IC= 0 10 μ A hFE DC Current Gain IC= 20mA ; VCE= 5V 80 160 fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 5V ;f= 1 GHz 6 9 GHz COB Output Capacitance IE= 0 ; VCB= 5V;f= 1.0MHz 0.9 1.5 pF Cre Reverse Transfer Capacitance IE= 0 ; VCB= 5V;f= 1.0MHz 0.7 pF ︱ S21e︱2 Insertion Power Gain IC= 20mA ; VCE= 5V;f= 1GHz 11.8 dB PG Power Gain IC= 20mA ; VCC= 5V;f= 900MHz 9.5 13 dB NF Noise Figure IC= 5mA ; VCC= 5V;f= 900MHz 1.1 1.9 dB |
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