| Datenblatt-Suchmaschine für elektronische Bauteile |
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90N06 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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90N06 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc websit e: : : : www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 90N06 FEATURES · · · ·Drain Current –ID= 90A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.003Ω(Max) APPLICATIONS • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃ ℃ ℃ ℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 90 A IDM Drain Current-Single Pluse 360 A PD Total Dissipation 125 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W |
Ähnliche Teilenummer - 90N06 |
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Ähnliche Beschreibung - 90N06 |
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