2N6767 datasheet(1/2 Pages) ISC

Teilenummer	2N6767

Bauteilbeschribung	VGS Rated at 짹20V

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

2N6767

DESCRIPTION

·VGS Rated at ±20V

·Silicon Gate for fast switching speeds

·I

DSS 、RDS(ON) ，specified at elevated temperature

·Low drive requirements

APPLICATIONS

designed for high power ,high speed application ,such as

switching applies,UPS,AC and DC motor controls ,

relay and high energy pulse circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

ARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

350

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=37℃

12

A

Ptot

Total Dissipation@TC=25℃

150

W

Tj

Max. Operating Junction Temperature

-55~150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.83

℃/W

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Ähnliche Beschreibung - 2N6767

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Inchange Semiconductor ...	2N6769	47Kb / 2P	VGS Rated at 짹20V
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2N6767 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

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