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GP1002 Datenblatt(PDF) 1 Page - Taiwan Memory Technology |
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GP1002 Datenblatt(HTML) 1 Page - Taiwan Memory Technology |
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1 / 4 page ![]() GP1001 - GP1007 CREAT BY ART - High efficiency, low VF - High current capability - High surge current capability - Low power loss - Halogen-free according to IEC 61249-2-21 Molding compound, UL flammability classification rating 94V-0 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test VRRM 50 100 200 400 600 800 1000 V VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V IF(AV) A CJ pF RθJC °C/W TJ °C TSTG °C Version: F1511 GP 1005 GP 1006 Taiwan Semiconductor 10A, 50V - 1000V Glass Passivated Rectifiers FEATURES - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC TO-220AB MECHANICAL DATA Case: TO-220AB Polarity: As marked Mounting torque: 0.56 Nm max. Weight: 1.82 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) GP 1007 UNIT Maximum repetitive peak reverse voltage Maximum RMS voltage PARAMETER SYMBOL GP 1001 GP 1002 GP 1003 GP 1004 5 μA Maximum DC blocking voltage Maximum average forward rectified current 10 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 125 Note 1: Pulse test with PW=300μs, 1% duty cycle 30 A Maximum instantaneous forward voltage (Note 1) @ 5 A VF V 3 Maximum reverse current @ rated VR TJ=25°C IR Typical junction capacitance (Note 2) Typical thermal resistance TJ=125°C 200 Note 2: Measured at 1 MHz and applied reverse voltage of 4.0 V DC. 1.1 Operating junction temperature range - 55 to +150 Storage temperature range - 55 to +150 |
Ähnliche Teilenummer - GP1002 |
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Ähnliche Beschreibung - GP1002 |
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