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2SD1616 Datenblatt(PDF) 2 Page - Unisonic Technologies

Teilenummer 2SD1616
Bauteilbeschribung  NPN EPITAXIAL SILICON TRANSISTOR
PDF  3 Pages
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Hersteller  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SD1616 Datenblatt(HTML) 2 Page - Unisonic Technologies

  2SD1616 Datasheet HTML 1Page - Unisonic Technologies 2SD1616 Datasheet HTML 2Page - Unisonic Technologies 2SD1616 Datasheet HTML 3Page - Unisonic Technologies  
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UTC 2SD1616/A
NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R201-008,A
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Storage Time
ts
IB1=-IB2=10mA
0.95
us
Fall Time
tf
VBE(off)=-2～-3V
0.07
us
Classification of hFE1
RANK
Y
G
L
hFE1
135-270
200-400
300-600



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