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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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CT2321-R3 Datenblatt(PDF) 1 Page - CT Micro International Corporation |
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CT2321-R3 Datenblatt(HTML) 1 Page - CT Micro International Corporation |
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1 / 11 page  CT Micro Rev 3 Proprietary & Confidential Page 1 Oct, 2014 CT2321-R3 P-Channel Enhancement MOSFET Package Outline Schematic Features • Drain-Source Breakdown Voltage VDSS - 20 V • Drain-Source On-Resistance RDS(ON) 42m Ω, at VGS= - 4.5V, IDS= - 3.8A RDS(ON) 57m Ω, at VGS= - 2.5V, IDS= - 3.0A • Continuous Drain Current at TA=25℃ ID = - 3.8A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Applications • Power Management • Portable Equipment • Battery Powered System • DC/DC Converter • Load Switch Description The CT2321-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . Gate Source Drain Gate Drain Source |
Ähnliche Teilenummer - CT2321-R3 |
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Ähnliche Beschreibung - CT2321-R3 |
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