HFS4N65FS datasheet(3/7 Pages) SEMIHOW

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Typical Characteristics

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

024

G, Total Gate Charge [nC]

* Note : I

D = 4.0A

DS = 325V

DS = 130V

DS = 520V

-1

100

200

300

400

500

600

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

* Note ;

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

0.1

-25

* Notes :

1. V

DS= 30V

2. 300us Pulse Test

GS, Gate-Source Voltage [V]

150

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.1

* Notes :

1. V

GS= 0V

2. 300us Pulse Test

SD, Source-Drain Voltage [V]

150

-1

Top :

10.0 V

9.0 V

8.0 V

7.0 V

6.0 V

5.0 V

Bottom : 4.0 V

* Notes :

1. 300us Pulse Test

2. T

C = 25

DS, Drain-Source Voltage [V]

D, Drain Current[A]

GS = 10V

GS = 20V

* Note : T

J = 25

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