RJP1CS07DWA / RJP1CS07DWS

Preliminary

R07DS0830EJ0400 R07DS0830EJ0400 Rev.4.00

Page 3 of 3

Sep 30, 2015

Die Dimension

Illustration

Part of white

Part of dotted line

Part of gray

Note 1.

Note 2.

The back of the chip is processed with Au evaporation.

Note 3.

Recognition, target and any other patterns which are not related to

IGBT operation, may be changed without notice.

Definition

Al pattern

Bonding area

Final passivation

10.5

8.85

1.31

7.48

Emitter bonding pad (1)

Emitter bonding pad (4)

Emitter bonding pad (3)

Emitter bonding pad (2)

Gate

bonding pad

Unit: mm

Ordering Information

Orderable Part Number

Shipment form

RJP1CS07DWA-80#W0

Unsawn wafer

RJP1CS07DWS-80#W0

Sawn wafer