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DS8863 Datenblatt(PDF) 2 Page - National Semiconductor (TI) |
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DS8863 Datenblatt(HTML) 2 Page - National Semiconductor (TI) |
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2 / 4 page ![]() Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications DS8863 DS8963 Input Voltage Range (Note 1) b 5V to VSS b 5V to VSS Collector (Output) Voltage (Note 2) 10V 18V Collector (Output)-to-Input Voltage 10V 18V Emitter-to-Ground Voltage (VI t 5V) Emitter-to-Input Voltage Voltage at VSS Terminal With Respect to Any Other Device Terminal 10V 18V DS8863 DS8963 Collector (Output) Current Each Collector (Output) 500 mA 500 mA All Collectors (Output) 600 mA 600 mA Continuous Total Dissipation 800 mW 800 mW Operating Temperature Range 0 Cto a70 C0 Cto a70 C Storage Temperature Range b 65 Cto a150 C Maximum Power Dissipation at 25 C Molded Package 1563 mW 1563 mW Lead Temperature (Soldering 4 sec) 260 C 260 C Derate molded package 125 mW C above 25 C Electrical Characteristics VSS e 10V TA e 0 Cto a70 C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units VOL Low Level Output Voltage VIN e 7V IOUT e 500 mA TA e 25 C 15 V 16 V IOH High Level Output Current VOH e 10V IIN e 40 mA 250 m A VIN e 05V 250 m A II Input Current at Maximum Input Voltage VIN e 10V IOL e 20 mA 2 mA ISS Current into VSS Terminal 1mA 18V for the DS8963 Switching Characteristics VSS e 75V TA e 25 C Symbol Parameter Conditions Min Typ Max Units tPLH Propagation Delay Time Low-to-High Level Output VIH e 8V RL e 20X 300 ns tPHL Propagation Delay Time High-to-Low Level Output CL e 15 pF 30 ns Note 1 The input is the only device terminal which may be negative with respect to ground Note 2 Voltage values are with respect to network ground terminal unless otherwise noted 2 |
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