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BAS31 Datenblatt(PDF) 1 Page - Diotec Semiconductor

Teilenummer BAS31
Bauteilbeschribung  Surface Mount Small Signal Dual Diodes
PDF  2 Pages
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Hersteller  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BAS31 Datenblatt(HTML) 1 Page - Diotec Semiconductor

  BAS31 Datasheet HTML 1Page - Diotec Semiconductor BAS31 Datasheet HTML 2Page - Diotec Semiconductor  
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BAS31, BAS35
BAS31, BAS35
Surface Mount Small Signal Dual Diodes
Kleinsignal-Doppel-Dioden für die Oberflächenmontage
Version 2015-05-12
Dimensions - Maße [mm]
Power dissipation – Verlustleistung
350 mW
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
120 V
Plastic case
Kunststoffgehäuse
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
per diode / pro Diode
BAS31, BAS35
Power dissipation – Verlustleistung 1)
Ptot
350 mW 2)
Max. average forward current (dc)
Dauergrenzstrom
IFAV
200 mA 2)
Repetitive peak forward current
Periodischer Spitzenstrom
IFRM
600 mA 2)
Non repetitive peak forward surge current
Stoßstrom-Grenzwert
tp ≤ 1 s
tp ≤ 1 µs
IFSM
IFSM
1 A
2 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM
120 V
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55...+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Forward voltage 3)
Durchlass-Spannung 3)
IF = 10 mA
IF = 50 mA
IF = 100 mA
IF = 200 mA
IF = 400 mA
VF
VF
VF
VF
VF
< 750 mV
< 840 mV
< 900 mV
< 1.00 V
< 1.25 V
Leakage current
Sperrstrom
Tj = 25°C
Tj = 150°C
VR = 90 V
IR
< 100 nA
VR = 90 V
IR
< 100 µA
1
Total power dissipation of both diodes − Summe der Verlustleistungen beider Dioden
2
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
3
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
1.1
+0.1
0.4+0.1
2.9 ±0.1
1
2
3
Type
Code
1.9±0.1
-0.05
-0.2


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