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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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DMN4026SSD Datenblatt(PDF) 2 Page - Diodes Incorporated |
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DMN4026SSD Datenblatt(HTML) 2 Page - Diodes Incorporated |
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2 / 6 page  DMN4026SSD Document number: DS36351 Rev. 4 - 2 2 of 6 www.diodes.com June 2014 © Diodes Incorporated DMN4026SSD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 7) VGS = 10V Steady State TA = +25°C TA = +70°C ID 7.0 5.6 A T<10s TA = +25°C TA = +70°C ID 9.0 7.2 A Maximum Continuous Body Diode Forward Current (Note 7) IS 2.5 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 70 A Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 6) TA = +25°C PD 1.3 W TA = +70°C 0.8 Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 98 °C/W t<10s 59 Total Power Dissipation (Note 7) TA = +25°C PD 1.8 W TA = +70°C 1.1 Thermal Resistance, Junction to Ambient (Note 7) Steady State RθJA 71 °C/W t<10s 43 Thermal Resistance, Junction to Case (Note 7) RθJC 11.8 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 40 ⎯ ⎯ V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 µA VDS = 40V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) 1 ⎯ 3 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) ⎯ 15 24 mΩ VGS = 10V, ID = 6A ⎯ 20 32 VGS = 4.5V, ID = 5A Diode Forward Voltage VSD ⎯ 0.7 1.0 V VGS = 0V, IS = 1.0A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss ⎯ 1060 ⎯ pF VDS = 20V, VGS = 0V, f = 1.0MHz Output Capacitance Coss ⎯ 84 ⎯ Reverse Transfer Capacitance Crss ⎯ 58 ⎯ Gate Resistance RG ⎯ 1.6 ⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 4.5V) Qg ⎯ 8.8 20 nC VDS = 20V, ID = 8A Total Gate Charge (VGS = 10V) Qg ⎯ 19.1 43 Gate-Source Charge Qgs ⎯ 3.0 7.5 Gate-Drain Charge Qgd ⎯ 2.5 6 Turn-On Delay Time tD(on) ⎯ 5.3 ⎯ nS VDD = 25V, RL = 2.5Ω VGS = 10V, RG = 3Ω Turn-On Rise Time tr ⎯ 7.1 ⎯ Turn-Off Delay Time tD(off) ⎯ 15.1 ⎯ Turn-Off Fall Time tf ⎯ 4.8 ⎯ Body Diode Reverse Recovery Time trr ⎯ 10.5 ⎯ nS IF = 8A, di/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr ⎯ 4.15 ⎯ nC IF = 8A, di/dt = 100A/μs Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. |
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