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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF620A Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRF620A Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRF620A FEATURES ·Low RDS(on) = 0.626 Ω(TYP) ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 5 A IDM Drain Current-Single Pluse 18 A PD Total Dissipation @TC=25℃ 47 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ PDF pdfFactory Pro www.fineprint.cn |
Ähnliche Teilenummer - IRF620A |
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Ähnliche Beschreibung - IRF620A |
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