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IRF720 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited

Teilenummer IRF720
Bauteilbeschribung  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF720 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited

  IRF720 Datasheet HTML 1Page - Inchange Semiconductor Company Limited IRF720 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc N-Channel Mosfet Transistor
IRF720
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
400
V
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
2
4
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 1.8A
1.8
Ω
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
±500
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 400V; VGS=0
250
uA
VSD
Forward On-Voltage
IS= 3.3A; VGS=0
1.6
V
Ciss
Input Capacitance
VDS=25V,VGS=0V,
F=1.0MHz
360
pF
Coss
Output Capacitance
55
pF
Crss
Reverse Transfer Capacitance
20
pF
·SWITCHING CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
Td(on)
Turn-on Delay Time
VDD=200V,ID=3.3A
VGS=10V,RGEN=18Ω
RGS=18Ω
10
15
ns
Tr
Rise Time
14
21
ns
Td(off)
Turn-off Delay Time
30
45
ns
Tf
Fall Time
13
20
ns
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