Transistors

1

Publication date: August 2003

SJC00297AED

2SC5845

Silicon NPN epitaxial planar type

For general amplification

■ Features

• High forward current transfer ratio h

FE

• Mini type package, allowing downsizing of the equipment and au-

tomatic insertion through the tape packing and the magazine pack-

ing

■ Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

Collector-emitter voltage (Base open)

V

Emitter-base voltage (Collector open)

= 10 µΑ, I

C

= 07

V

Collector-base cutoff current (Emitter open)

0.1

µA

Collector-emitter cutoff current (Base open)

100

µA

Forward current transfer ratio

= 10 V, I

C

= 2 mA

160

460



Collector-emitter saturation voltage

0.1

0.3

V

Collector output capacitance

2.2

pF

(Common base, input open circuited)

Transition frequency

100

MHz

■ Electrical Characteristics T

a

= 25°C ± 3°C

Unit: mm

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

60

V

Collector-emitter voltage (Base open)

50

V

Emitter-base voltage (Collector open)

7V

Collector current

100

mA

Peak collector current

200

mA

Collector power dissipation

200

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Marking Symbol: 7M

0.40

+0.10

–0.05

2

1

3

(0.95) (0.95)

2.90

+0.20

–0.05

0.16

+0.10

–0.06

10˚

1: Base

2: Emitter

3: Collector

EIAJ: SC-59

Mini3-G1 Package

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.