BUX66B datasheet(2/2 Pages) ISC

Teilenummer	BUX66B

Bauteilbeschribung	isc Silicon NPN Power Transistors

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc Silicon NPN Power Transistors

BUX66B/C

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

BUX66B

IC= -200mA ; IB=0

-300

BUX66C

-350

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -1A; IB= -0.15A

-2.5

VBE(sat)

Base-Emitter Saturation Voltage

IC= -1A; IB= -0.15A

-1.5

ICEO

Collector Cutoff Current

VCE= -150V; IB= 0

-5.0

ICEX

Collector Cutoff Current

BUX66B

VCB=-350V;VBE= 1.5V;

VCB=-350V;VBE= 1.5V;TC=100℃

-8.0

-10.0

BUX66C

VCB=-400V;VBE= 1.5V;

VCB=-400V;VBE= 1.5V;TC=100℃

-8.0

-10.0

IEBO

Emitter Cutoff Current

VEB= -6V; IC=0

-1.0

hFE

DC Current Gain

IC= -1A; VCE= -5V

150

Switching Times

Rise Time

IC= -1A; IB1= -IB2= -0.1A;

VCC= -200V

0.6

μs

Storage Time

2.5

μs

Fall Time

0.6

μs

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