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BUX66C Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer BUX66C
Bauteilbeschribung  isc Silicon NPN Power Transistors
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUX66C Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
1
isc Silicon NPN Power Transistors
BUX66B/C
DESCRIPTION
·Contunuous Collector Current-IC= -2A
·Power Dissipation-PD= 35W @TC= 25℃
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -2.5V(Max)@ IC = -1A
APPLICATIONS
·Designed for high-speed switching and linear amplifier appli-
cation for high-voltage operational amplifiers, switching regu-
lators, converters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
5.0
℃/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
BUX66B
-350
V
BUX66C
-400
VCEO
Collector-Emitter Voltage
BUX66B
-300
V
BUX66C
-350
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-2.0
A
ICP
Collector Current-Peak
-5.0
A
IB
Base Current
-1.0
A
PC
Collector Power Dissipation@TC=25℃
35
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃


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