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EMB1433Q Datenblatt(PDF) 7 Page - Texas Instruments

Teilenummer EMB1433Q
Bauteilbeschribung  60V 14-Channel Battery Stack Protection Chip
PDF  37 Pages
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Hersteller  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
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EMB1433Q Datenblatt(HTML) 7 Page - Texas Instruments

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EMB1433Q
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SNVS786B – JANUARY 2012 – REVISED NOVEMBER 2014
Electrical Characteristics
(1) (continued)
Unless otherwise specified, all limits specified for TA = 25°C, VP = VIO = VPREF = CHPVP = nRS = nSD = 5 V,
GND = DGND = GNDREF= CHPnSD=0V, VM = –5 V, logic state High “H” = 5 V, logic state Low “L”= GND. Limits apply at
the temperature extremes.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN (2)
TYP (3)
MAX (2)
UNIT
RLVREFOUT=10MΩ
DC PSRRVREF
Reference Output Voltage PSRR
60
66
dB
4.75V
≤VPREF≤ 5.5V
Reference Output Voltage AC PSRR
RLVREFOUT=100KΩ, CLVREFOUT=5pF
AC PSRRVREF
17
20
dB
(4)
VREF_OUT vs. VPREF, f=1 kHz
Reference Output Voltage Load
eVREF_OUTLR
Load current 1mA
0.005%
Regulation error (4)
VREFDRIFT
Long Term VREF Drift
1000 hours OPL
5
mV
nSD=H
4
6 (7)
nSD=L
(VSENSE(N)-
0.01
0.5 (7)
ISENSE
Sense Input Current (6)
-40°C<TA<65°C
µA
VSENSE(N-1))=4V
nSD=L
0.013
4 (7)
-40°C<TA<125°C
monitoring
560
820 (7)
nSD=H
average
94
135 (7)
(VSENSE(N)-
IVP
Analog Positive Supply Current
VSENSE(N-1))=4V;
µA
idle
36
44 (7)
14 cells monitored.
0.5
nSD=L
0.01
(7)
monitoring
95
185 (7)
(VSENSE(N)-
CHPnSD=H
average
47
140 (7)
VSENSE(N-
nSD=H
ICHPVP
Charge Pump Positive Supply Current
1))=4V;
idle
40
120 (7)
µA
14 cells
CHPnSD=L
average
13
22 (7)
monitored.
nSD=L
0.005
0.5 (7)
monitoring
193
270 (7)
(VSENSE(N)-
nSD=H
average
115
140 (7)
IVIO
Digital Positive Supply Current
VSENSE(N-1))=4V;
µA
idle
105
130 (7)
14 cells monitored.
nSD=L
0.2
5 (7)
monitoring
38
55 (7)
(VSENSE(N)-
nSD=H
average
14
25 (7)
IVM
Negative Supply Current
VSENSE(N-1))=4V;
µA
idle
11
18 (7)
14 cells monitored.
nSD=L
0.012
0.5 (7)
IVPREF
Voltage Reference supply current
nSD=H
average
13
24 (7)
µA
fCP
Charge Pump Switching frequency (4)
380
KHz
fOSC
Internal oscillator frequency (4)
Time during which a single cell is monitored if no fault
tCOMP
Comparator Time Window (4)
100
µs
is detected.
External capacitor on C_EXT pin for
CEXT
0.1
200
nF
tMASK programmability
(4)
IDOUTLS_H
IDOUT_LS sourced current
ON phase
210
238
260
µA
IDOUTLS_L
IDOUT_LS sourced current
OFF phase
0
mA
IPING_IOLS_H
PING_IO_LS sourced current
PING pulse asserted
1.2
1.5
2.0
mA
IPING_IOLS_L
PING_IO_LS sourced current
PING pulse not asserted
0
mA
Fault communication current mode
IDINLS_H
50
120
µA
input high threshold
Fault communication current mode
IDINLS_L
25
75
µA
input low threshold
IPING_IOHS_H
Ping current mode input high threshold
650
800
µA
IPING_IOHS_L
Ping current mode input low threshold
450
550
µA
Ping current sunk from PING_IO_HS
IPING_HS
On triggering the next top module
2
mA
(4)
(6)
Positive Bias Current corresponds to current flowing into the device.
(7)
Limits apply at the temperature extremes.
Copyright © 2012–2014, Texas Instruments Incorporated
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