3

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R05

CPC1998

2

Thermal Characteristics

2.1 Thermal Management

Device high current characterization was performed using Kunze heat sink KU 1-159, phase change thermal interface

material KU-ALC 5, and transistor clip KU 4-499/1. This combination provided an approximate junction-to-ambient

thermal resistance of 12.5°C/W.

2.2 Heat Sink Calculation

Higher load currents are possible by using lower thermal resistance heat sink combinations.

2.3 Thermal Performance Data

Parameter

Conditions

Symbol

Rating

Units

Thermal Resistance (Junction to Case)

-



JC

0.35

°C/W

Thermal Resistance (Junction to Ambient)

Free Air



JA

33

°C/W

Junction Temperature (Operating)

-

-40 to +125

°C

θ

-

θ

JC

(T

P

D

T

T

θ

θ

P

* Elevated junction temperature reduces semiconductor lifetime.

NOTE: The exposed surface of the DCB substrate is not to be soldered.

Heat Sink Rating

Load Current (A

0

5

10

15

20

25

30

35

40

0

5

10

15

20

25

30

35

40

Output Power

vs. Load Current

Temperature (ºC)

0

25

50

75

100

125

0

5

10

15

20

25

30

35

40

Output Power

vs. Ambient Temperature

Heat Sink

1ºC/W

2ºC/W

5ºC/W

10ºC/W

15ºC/W

Free Air