LM432 datasheet(2/9 Pages) TI1

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LM432

SNOS538D – AUGUST 2000 – REVISED MARCH 2013

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2) (3)

Suppy Voltage (VS)

20V

Storage Temperature

−65°C to 150°C

Junction Temperature (TJ)

150°C

ESD Human Body Model

2kV

Input Voltage Range

−0.3V to 20V

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.

(2)

All voltages are measured with respect to GND = 0VDC, unless otherwise specified.

(3)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and

specifications.

Operating Ratings

(1) (2)

Temperature Range

−40°C to 85°C

Supply Voltage(3)

2.5V to 16V

Thermal Resistance(

θJA)

162°C/W

(1)

Operating Rating indicate conditions for which the device is functional. These rating do not ensure specific performance limits. For

ensured specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test

conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions.

(2)

All voltages are measured with respect to GND = 0VDC, unless otherwise specified.

(3)

Minimum value of operating voltage is for Amplifier B only.

Electrical Characteristics

The following specifications apply for both amplifiers at VS = 5V, VCM = 2.5V, VO = 2.5V, RL = ∞, and TJ = 25°C, unless

otherwise noted.

Symbol

Parameter

Conditions

Min(1)

Typ(2)

Max(1)

Units

OP Amp Circuitry

VOS

Input Offset Voltage

Amplifier B only

−4

0.6

IOS

Input Offset Current

Amplifier B only

Input Bias Current

Amplifier B only

150

VCM

Common-Mode Input Voltage Range

Amplifier B only, CMRR > 50dB

VS-1

Power Supply Current

Total for both amplifiers

150

500

µA

VS = 16V, 1V < VO < 11V,

Voltage Gain

100

RL = 10kΩ connected to VS/2

VOL

Output Voltage Low

VOH

Output Voltage High

VS – 1.5

VS – 1.3

ISOURCE

Output Current Source

ISINK

Output Current Sink

Reference Circuitry For Op Amp A (The following specifications apply for IZ = 200µA and TJ = 25°C, unless otherwise noted.)

Reference Voltage at IN+ Terminal

2.450

2.5

2.550

VZDEV

Reference Voltage Deviation at IN+

−40°C ≤ TJ ≤ 85°C

Terminal Over Temperature(3)(4)

IZ (MIN)

Minimum Cathode Current for Regulation

150

200

µA

at IN+ (VZ) Terminal

Dynamic Output Impedance(5)

200µA < IZ < 1mA, Freq = 0Hz

0.2

Ω

(1)

Ensured to Average Outgoing Quality Level (AOQL).

(2)

Typicals represent the most likely parametic norm.

(3)

Reference voltage deviation, VZDEV, is defined as the maximum variation of the reference input voltage over the full temperature range.

(4)

Typical Temperature drift

ΔV/ΔT = 12.8ppm/°C

(5)

The Dynamic Output Impendance, rz, is defined as rz = ΔVZ/ΔIZ.

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