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LM5134AMF/NOPB Datenblatt(PDF) 18 Page - Texas Instruments

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Teilenummer LM5134AMF/NOPB
Bauteilbeschribung  Single 7.6-A Peak Current Low-Side Gate Driver
PDF  27 Pages
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Hersteller  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
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LM5134AMF/NOPB Datenblatt(HTML) 18 Page - Texas Instruments

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LM5134
SNVS808C – MAY 2012 – REVISED FEBRURARY 2016
www.ti.com
Product Folder Links: LM5134
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Copyright © 2012–2016, Texas Instruments Incorporated
10 Layout
10.1 Layout Guidelines
Attention must be given to board layout when using LM5134. Some important considerations include:
1. The first priority in designing the layout of the driver is to confine the high peak currents that charge and
discharge the FETs gate into a minimal physical area. This will decrease the loop inductance and minimize
noise issues on the gate.
2. To reduce the loop inductance, the driver should be placed as close as possible to the FETs. The gate trace
to and from the FETs are recommended to be placed closely side by side, or directly on top of one another.
3. The parasitic source inductance, along with the gate capacitor and the driver pulldown path, can form a LCR
resonant tank, resulting in gate voltage oscillations. An optional resistor or ferrite bead can be used to damp
the ringing.
10.2 Layout Example
Figure 27. LM5134 Layout Example



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