FEATURES

DIRECT REPLACEMENT FOR SILICONIX PAD SERIES

REVERSE BREAKDOWN VOLTAGE

REVERSE CAPACITANCE

ABSOLUTE MAXIMUM RATINGS

1

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

-65 to +150 °C

Operating Junction Temperature

-55 to +135 °C

Maximum Power Dissipation

Continuous Power Dissipation (PAD)

300mW

Continuous Power Dissipation (J/SSTPAD)

350mW

Maximum Currents

Forward Current (PAD)

50mA

Forward Current (J/SSTPAD)

10mA

COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL

CHARACTERISTIC

MIN

TYP

MAX UNITS

CONDITIONS

ALL PAD

-45

ALL SSTPAD

-30

Reverse Breakdown

Voltage

ALL JPAD

-35

Forward Voltage

0.8

1.5

V

PAD1,5

0.5

0.8

Total Reverse Capacitance

All Others

1.5

2

pF

SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL

CHARACTERISTIC

PAD

2

JPAD

2

SSTPAD

2

UNITS

CONDITIONS

(SST/J)PAD1

-1

(SST/J)PAD2

-2

(SST/J)PAD5

-5

-5

-5

(SST/J)PAD10

-10

-10

-10

(SST/J)PAD20

-20

-20

-20

(SST/J)PAD50

-50

-50

-50

(SST/J)PAD100

-100

-100

(SST/J)PAD200

-200

Maximum Reverse

Leakage Current

2

(SST/J)PAD500

-500

pA

* Cathode tied to Case

PAD*

A

K*

1

2

BOTTOM VIEW

TO-72

SSTPAD

1

2

3

SOT-23

TOP VIEW

K

A

K

JPAD

TO-92

BOTTOM VIEW

1

2

KA

PAD1,2,5

A

K

C

13

2

BOTTOM VIEW

TO-72

Linear Integrated Systems

PAD SERIES

PICO AMPERE DIODES