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PMEG2005EB Datenblatt(PDF) 2 Page - NXP Semiconductors

Teilenummer PMEG2005EB
Bauteilbeschribung  Low VF MEGA Schottky barrier diode
PDF  8 Pages
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PMEG2005EB Datenblatt(HTML) 2 Page - NXP Semiconductors

  PMEG2005EB Datasheet HTML 1Page - NXP Semiconductors PMEG2005EB Datasheet HTML 2Page - NXP Semiconductors PMEG2005EB Datasheet HTML 3Page - NXP Semiconductors PMEG2005EB Datasheet HTML 4Page - NXP Semiconductors PMEG2005EB Datasheet HTML 5Page - NXP Semiconductors PMEG2005EB Datasheet HTML 6Page - NXP Semiconductors PMEG2005EB Datasheet HTML 7Page - NXP Semiconductors PMEG2005EB Datasheet HTML 8Page - NXP Semiconductors  
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2003 Apr 04
2
Philips Semiconductors
Product specification
Low VF MEGA Schottky barrier diode
PMEG2005EB
FEATURES
• Forward current: 0.5 A
• Reverse voltage: 20 V
• Very low forward voltage
• Guard ring protected
• Ultra small SMD package.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Low current rectification
• Low power consumption applications (e.g. handheld
devices).
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode, encapsulated in a SOD523
(SC-79) ultra small SMD plastic package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
handbook, halfpage
ka


Top view
MAM403
Fig.1
Simplified outline (SOD523; SC-79) and
symbol.
Marking code: L5.
The marking bar indicates the cathode.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
20
V
IF
continuous forward current
500
mA
IFRM
repetitive peak forward current
tp = 1 ms; δ≤ 0.25
3.5
A
IFSM
non-repetitive peak forward current
t = 8 ms square wave
6A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
125
°C
Tamb
operating ambient temperature
−65
+125
°C



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