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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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TL032ACDR Datenblatt(PDF) 9 Page - Texas Instruments |
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TL032ACDR Datenblatt(HTML) 9 Page - Texas Instruments |
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9 / 74 page  TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 9 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TL031I and TL031AI electrical characteristics at specified free-air temperature (continued) TL031I, TL031AI PARAMETER TEST CONDITIONS TA VCC± = ±5 V VCC± = ±15 V UNIT PARAMETER TEST CONDITIONS TA MIN TYP MAX MIN TYP MAX UNIT 25 °C 1.9 2.5 6.5 8.4 PD Total power dissipation VO = 0, No load −40 °C 1.4 2.5 5.4 8.4 mW PD Total power dissipation VO 0, No load 85 °C 1.9 2.5 6.2 8.4 mW 25 °C 192 250 217 280 ICC Supply current VO = 0, No load −40 °C 144 250 181 280 μA CC pp y O , 85 °C 189 250 207 280 μ TL031I and TL031AI operating characteristics at specified free-air temperature TL031I, TL031AI PARAMETER TEST CONDITIONS TA VCC± = ±5 V VCC± = ±15 V UNIT PARAMETER TEST CONDITIONS TA MIN TYP MAX MIN TYP MAX UNIT R 10 k Ω C 100 F 25 °C 2 1.5 2.9 SR+ Positive slew rate at unity gain† RL = 10 kΩ, CL = 100 pF See Figure 1 −40 °C 1.6 1 2.1 V/ μs SR+ unity gain† See Figure 1 85 °C 2.3 1.5 3.3 V/ μs N ti l ttit R 10 k Ω C 100 F 25 °C 3.9 1.5 5.1 SR− Negative slew rate at unity gain† RL = 10 kΩ, CL = 100 pF See Figure 1 −40 °C 3.3 1.5 4.8 V/ μs SR gain† See Figure 1 85 °C 4.1 1.5 4.9 V/ μs VI(PP) = ±10 mV, 25 °C 138 132 tr Rise time VI(PP) = ±10 mV, RL = 10 kΩ, CL = 100 pF −40 °C 132 123 ns tr Rise time RL 10 kΩ, CL 100 pF See Figures 1 and 2 85 °C 154 146 ns VI(PP) = ±10 mV, 25 °C 138 132 tf Fall time VI(PP) = ±10 mV, RL = 10 kΩ, CL = 100 pF −40 °C 132 123 ns tf Fall time RL 10 kΩ, CL 100 pF See Figure 1 85 °C 154 146 ns VI(PP) = ±10 mV, 25 °C 11% 5% Overshoot factor VI(PP) = ±10 mV, RL = 10 kΩ, CL = 100 pF −40 °C 12% 5% Overshoot factor RL 10 kΩ, CL 100 pF See Figures 1 and 2 85 °C 13% 7% TL031I f = 10 Hz 25 °C 61 61 V Equivalent it TL031I RS = 20 Ω f = 1 kHz 25 °C 41 41 nV/ √H Vn input noise voltage TL031AI RS = 20 Ω See Figure 3 f = 10 Hz 25 °C 61 61 nV/ √Hz noise voltage TL031AI f = 1 kHz 25 °C 41 41 60 I Equivalent input noise f 1 kHz 25 °C 0 003 0 003 pA/ √H In Equivalent input noise current f = 1 kHz 25 °C 0.003 0.003 pA/ √Hz VI = 10 mV 25 °C 1 1.1 B1 Unity-gain bandwidth VI = 10 mV RL = 10 kΩ, CL = 25 pF −40 °C 1 1.1 MHz B1 Unity gain bandwidth RL 10 k Ω, CL 25 pF See Figure 4 85 °C 0.9 1 MHz VI = 10 mV, 25 °C 61 ° 65 ° φm Phase margin at unity gain VI = 10 mV, RL = 10 kΩ, CL = 25 pF −40 °C 60 ° 65 ° φm gy g RL 10 k Ω, CL 25 pF See Figure 4 85 °C 60 ° 64 ° † For VCC± = ±5 V, VI(PP) = ±1 V; for VCC± = ±15 V, VI(PP) = ±5 V |
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