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BUW57 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer BUW57
Bauteilbeschribung  isc Silicon NPN Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUW57 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
1
isc Silicon NPN Power Transistor
BUW57
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 125V(Min.)
·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max.) @IC= 18A
APPLICATIONS
·Designed for high current, high speed, high power
applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
150
V
VCEO
Collector-Emitter Voltage
125
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
20
A
ICM
Collector Current-Peak
25
A
IB
Base Current-Continuous
4
A
IBM
Base Current-peak
6
A
PC
Collector Power Dissipation
@TC=25℃
120
W
Tj
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-65~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.25
℃/W


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