LPV511 datasheet(3/21 Pages) TI1

3 / 21 page

LPV511

www.ti.com

SNOSAG7C – AUGUST 2005 – REVISED MARCH 2013

3V Electrical Characteristics

(1)

Unless otherwise specified, all limits are specified for TJ = 25°C, V

+ = 3V, V− = 0V, V

CM = VO = V

+/2, and R

L = 100 kΩ to V

+/2 .

Boldface limits apply to the temperature range of

−40°C to 85°C.

Symbol

Parameter

Conditions

Min

Typ

Max

Units

(2)

(3)

(2)

VOS

Input Offset Voltage

±0.2

±3

±3.8

TC VOS

Input Offset Voltage Drift

See(4)

±0.3

±15

μV/°C

Input Bias Current(5)

VCM = 0.5V

−1000

−320

–1600

VCM = 2.5V

110

800

1900

IOS

Input Offset Current

±10

CMRR

Common Mode Rejection Ratio

VCM Stepped from 0V to 1.5V

100

VCM Stepped from 2.4V to 3V

115

VCM Stepped from 0.5V to 2.5V

PSRR

Power Supply Rejection Ratio

V+ = 2.7V to 5V, VCM = 0.5V

114

V+ = 3V to 5V, VCM = 0.5V

115

V+ = 5V to 12V, VCM = 0.5V

117

CMVR

Input Common-Mode Voltage

CMRR

≥ 50 dB

−0.1

3.1

Range

3.0

AVOL

Large Signal Voltage Gain

Sinking, VO = 2.5V

105

Sourcing, VO = 0.5V

Output Swing High

VID = 100 mV

2.85

2.90

2.8

Output Swing Low

VID = −100 mV

100

150

200

ISC

Output Short Circuit Current(6)

Sourcing

−500

−225

VID = 100 mV

µA

Sinking

225

1350

VID = −100 mV

Supply Current

0.88

1.2

µA

1.5

Slew Rate(7)

AV = +1, VO ramps from 0.5V to 2.5V

5.25

7.7

V/ms

3.10

GBW

Gain Bandwidth Product

RL = 1 MΩ, CL= 50 pF

kHz

Phase Margin

RL = 1 MΩ, CL= 50 pF

deg

Input-Referred Voltage Noise

f = 100 Hz

320

nV/

√Hz

Input-Referred Current Noise

f = 10 Hz

.02

pA/

√Hz

f = 1 kHz

.01

(1)

Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very

limited self-heating of the device.

(2)

Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using the

Statistical Quality Control (SQC) method.

(3)

Typical values represent the most likely parametric norm at the time of characterization.

(4)

Offset voltage drift is specified by design and/or characterization and is not tested in production. Offset voltage drift is determined by

dividing the change in VOS at temperature extremes into the total temperature change.

(5)

Positive current corresponds to current flowing into the device.

(6)

The Short Circuit Test is a momentary test. See Note 4 in the Absolute Maximum Ratings Table.

(7)

Slew rate is the average of the rising and falling slew rates.

Submit Documentation Feedback

Product Folder Links: LPV511

LPV511 Datenblatt(PDF) 3 Page - Texas Instruments

LPV511 Datenblatt(HTML) 3 Page - Texas Instruments

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21

Datenblatt Download

Link URL