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TLV2211CDBV Datenblatt(PDF) 3 Page - Texas Instruments

Teilenummer TLV2211CDBV
Bauteilbeschribung  Advanced LinCMOS RAIL-TO-RAIL MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
PDF  31 Pages
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Hersteller  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TLV2211CDBV Datenblatt(HTML) 3 Page - Texas Instruments

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SLOS156E − MAY 1996 − REVISED SEPTEMBER 2006
TLV2211, TLV2211Y
Advanced LinCMOS RAILTORAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TLV2211Y chip information
This chip, when properly assembled, displays characteristics similar to the TLV2211C. Thermal compression
or ultrasonic bonding may be used on the doped-aluminum bonding pads. This chip may be mounted with
conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 10 MILS TYPICAL
BONDING PADS: 4
× 4 MILS MINIMUM
TJmax = 150°C
TOLERANCES ARE
±10%.
ALL DIMENSIONS ARE IN MILS.
PIN (2) IS INTERNALLY CONNECTED
TO BACK SIDE OF CHIP.
+
OUT
IN +
IN −
VDD +
(5)
(1)
(3)
(4)
(2)
VDD −/ GND
40
(3)
(2)
(1)
(5)
(4)
32



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