LP5910 datasheet(4/29 Pages) TI1

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LP5910

SNVSA91C – SEPTEMBER 2015 – REVISED JUNE 2016

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(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltages are with respect to the GND pin.

(3)

Internal thermal shutdown circuitry protects the device from permanent damage.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1) (2)

MIN

MAX

UNIT

Input voltage, VIN

–0.3

3.6

Output voltage, VOUT

–0.3

3.6

Enable input voltage, VEN

–0.3

3.6

Continuous power dissipation(3)

Internally Limited

Junction temperature, TJ(MAX)

150

°C

Storage temperature, Tstg

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±1000

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±250

(1)

The maximum ambient temperature, (TA(MAX)) is a recommended value only and can vary depending on device power dissipation and

RθJA. For reliable operation, the junction temperature (TJ) must be limited to a maximum of 125°C. Ambient temperature (TA), thermal

resistance (RθJA) , VIN, VOUT, and IOUT all define TJ : TJ = TA + (RθJA × ((VIN – VOUT) × IOUT).

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Input voltage, VIN

1.3

3.3

Output voltage, VOUT

0.8

2.3

Enable input voltage, VEN

3.3

Output current, IOUT

300

Junction temperature, TJ

(1)

–40

125

°C

Ambient temperature, TA

(1)

–40

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

(2)

Thermal resistance value RθJA is based on the EIA/JEDEC High-K printed circuit board defined by: JESD51-7 - High Effective Thermal

Conductivity Test Board for Leaded Surface Mount Packages.

(3)

The PCB for the WSON/DRV package RθJA includes two (2) thermal vias under the exposed thermal pad per EIA/JEDEC JESD51-5.

6.4 Thermal Information

THERMAL METRIC(1)

LP5910

UNIT

YKA (DSBGA)

DRV (WSON)

4 PINS

6 PINS

RθJA

(2)

Junction-to-ambient thermal resistance, High-K

202.8

79.2(3)

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

3.3

110.2

RθJB

Junction-to-board thermal resistance

36.0

48.7

ψJT

Junction-to-top characterization parameter

0.4

5.2

ψJB

Junction-to-board characterization parameter

36.0

49.1

RθJC(bot)

Junction-to-case (bottom) thermal resistance

n/a

18.1

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