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LP8545 Datenblatt(PDF) 4 Page - Texas Instruments

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Teilenummer LP8545
Bauteilbeschribung  High-Efficiency LED Backlight Driver for Notebooks
PDF  44 Pages
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Hersteller  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
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LP8545 Datenblatt(HTML) 4 Page - Texas Instruments

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LP8545
SNVS635D – APRIL 2010 – REVISED DECEMBER 2013
www.ti.com
Pin Descriptions(1)
Pin #
Name
Type
Description
1
GND_SW
G
Boost switch ground
2
PWM
A
PWM dimming input. This pin must be connected to GND if not used.
3
ISET
A
Set resistor for LED current. This pin can be left floating if not used.
4
EN
I
Enable input pin
5
FSET
A
PWM frequency set resistor. This pin can be left floating if not used.
6
GD
A
Gate driver for external FET. If not used, can be left floating.
7
FAULT
OD
Fault indication output. If not used, can be left floating.
8
VDDIO
P
Digital IO reference voltage (1.65V...5V) for I2C interface. If brightness is controlled with
PWM input pin then this pin can be connected to GND.
9
GND_S
G
Signal ground
10
SCLK
I
Serial clock. This pin must be connected to GND if not used.
11
SDA
I/O
Serial data. This pin must be connected to GND if not used.
12
OUT1
A
Current sink output
13
OUT2
A
Current sink output
14
OUT3
A
Current sink output
15
GND_L
G
LED ground
16
OUT4
A
Current sink output
17
OUT5
A
Current sink output
18
OUT6
A
Current sink output
19
VSYNC
I
VSYNC input. This pin must be connected to GND if not used.
20
FILTER
A
Low pass filter for PLL. This pin can be left floating if not used.
21
FB
A
Boost feedback input
22
VLDO
P
LDO output voltage. External 5V rail can be connected to this pin in low voltage
application.
23
VIN
P
Input power supply up to 22V. If 2.7V
≤ VBATT < 5.5V (Typical Application for Low
Input Voltage (2)) then external 5V rail must be used for VLDO and VIN.
24
SW
A
Boost switch. With external FET (typ. app. (3)) this pin acts as a current sense.
(1)
A: Analog Pin, G: Ground Pin, P: Power Pin, I: Input Pin, I/O: Input/Output Pin, O: Output Pin, OD: Open Drain Pin
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
4
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Copyright © 2010–2013, Texas Instruments Incorporated
Product Folder Links: LP8545



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