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INA118P Datenblatt(PDF) 4 Page - Texas Instruments

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Teilenummer INA118P
Bauteilbeschribung  INA118 Precision, Low Power Instrumentation Amplifier
PDF  29 Pages
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Hersteller  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

INA118P Datenblatt(HTML) 4 Page - Texas Instruments

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INA118
SBOS027A – SEPTEMBER 2000 – REVISED JANUARY 2016
www.ti.com
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Supply voltage
±18
V
Analog input voltage
±40
V
Output short-circuit (to ground)
Continuous
Operating temperature
–40
125
°C
Junction temperature
150
°C
Lead temperature (soldering, 10 s)
300
°C
Tstg
Storage temperature
–40
125
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±1000
V(ESD)
Electrostatic discharge
V
Charged-device model (CDM), per JEDEC specification JESD22-
±500
C101(2)
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
V
Power supply
±2.25
±15
±18
V
VO = 0
Input common-mode voltage
V– + 1.1
V+ – 1
V
TA
Ambient temperature
–55
150
°C
6.4 Thermal Information
INA118
THERMAL METRIC(1)
D (SOIC)
P (PDIP)
UNIT
8 PINS
8 PINS
RθJA
Junction-to-ambient thermal resistance
115
48
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
62
37
°C/W
RθJB
Junction-to-board thermal resistance
59
25
°C/W
ψJT
Junction-to-top characterization parameter
14
14
°C/W
ψJB
Junction-to-board characterization parameter
58
25
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
N/A
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
4
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Copyright © 2000–2016, Texas Instruments Incorporated
Product Folder Links: INA118



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