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CMPT3906 Datenblatt(PDF) 1 Page - Central Semiconductor Corp |
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CMPT3906 Datenblatt(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page ![]() MAXIMUM RATINGS: (TA=25°C) SYMBOL CMPT3904 CMPT3906 UNITS Collector-Base Voltage VCBO 60 40 V Collector-Emitter Voltage VCEO 40 40 V Emitter-Base Voltage VEBO 6.0 5.0 V Continuous Collector Current IC 200 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ,Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) CMPT3904 CMPT3906 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICEV VCE=30V, VEB=3.0V 50 50 nA IBL VCE=30V, VEB=3.0V 50 50 nA BVCBO IC=10µA 60 40 V BVCEO IC=1.0mA 40 40 V BVEBO IE=10µA 6.0 5.0 V VCE(SAT) IC=10mA, IB=1.0mA 0.20 0.25 V VCE(SAT) IC=50mA, IB=5.0mA 0.30 0.40 V VBE(SAT) IC=10mA, IB=1.0mA 0.65 0.85 0.65 0.85 V VBE(SAT) IC=50mA, IB=5.0mA 0.95 0.95 V hFE VCE=1.0V, IC=0.1mA 40 60 hFE VCE=1.0V, IC=1.0mA 70 80 hFE VCE=1.0V, IC=10mA 100 300 100 300 hFE VCE=1.0V, IC=50mA 60 60 hFE VCE=1.0V, IC=100mA 30 30 CMPT3904 NPN CMPT3906 PNP COMPLEMENTARY SILICON TRANSISTORS SOT-23 CASE Central Semiconductor Corp. TM R4 (26-September 2002) DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3904, CMPT3906 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose amplifier and switching applications. MARKING CODES: CMPT3904: C1A CMPT3906: C2A |
Ähnliche Teilenummer - CMPT3906 |
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Ähnliche Beschreibung - CMPT3906 |
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