| Datenblatt-Suchmaschine für elektronische Bauteile |
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2N6530 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N6530 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor 2N6530 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA 2.0 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA 3.0 V VBE(on)-1 Base-Emitter On Voltage IC= 5A; VCE= 3V 2.8 V V BE(on)-2 Base-Emitter On Voltage IC= 8A ; VCE= 3V 4.5 V ICEO Collector Cutoff Current VCE= 80V; IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 mA hFE-1 DC Current Gain IC= 5A; VCE= 3V 1000 10000 hFE-2 DC Current Gain IC= 8A ; VCE= 3V 100 5000 COB Output Capacitance VCB= 10V;IE= 0; f= 1MHz 200 pF |
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