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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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MMST3906 Datenblatt(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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MMST3906 Datenblatt(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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1 / 2 page  Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FEATURES Power dissipation.(PC=0.2W) Epitaxial planar die construction. Marking: K5N MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage V CBO -40 V Collector-Emitter Voltage V CEO -40 V Emitter-Base Voltage V EBO -5 V Collector Current -Continuous I C -200 mA Collector Power Dissipation PC 200 mW Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max UNit Collector-base breakdown voltage VCBO IC=-10μA,IE=0 -40 V Collector-emitter breakdown voltage VCEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage VEBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -0.05 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.05 μA DC current gain hFE VCE=-1V,IC=-0.1mA VCE=-1V,IC=-1mA VCE=-1V,IC=-10mA VCE=-1V,IC=-50mA VCE=-1V,IC=-100mA 60 80 100 60 30 300 Collector-emitter saturation voltage VCE(sat) IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA -0.25 -0.4 V Base-emitter saturation voltage VBE(sat) IC=-10mA, IB=-1Ma IC=-50mA, IB=-5mA -0.65 -0.85 -0.95 V Transition frequency fT VCE=-20V,IC= -10mA, f=100MHz 250 MHz Collector output capacitance Cobo VCB=-5V,IE=0,f=1MHz 4.5 pF Collector input capacitance Ciob VCB=-5V,IE=0,f=1MHz 10 pF Noise figure NF VCE=-5V,IC=-0.1mA, f=1KHz,Rs=1KΩ 4 dB Delay time td VCC=-3V,VBE=-0.5V, IC=-10mA,IB1=-1mA 35 nS Rise time tr 35 nS Storage time ts VCC=-3V,IC=-10mA, IB1=IB2=-1mA 225 nS Fall time tf 75 nS MMST3906(PNP) 1. BASE 2. EMITTER SOT-323 3. COLLECTO |
Ähnliche Teilenummer - MMST3906 |
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Ähnliche Beschreibung - MMST3906 |
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