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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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MMST4403 Datenblatt(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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MMST4403 Datenblatt(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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1 / 2 page  Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FEATURES Epitaxial planar die construction. Complementary PNP type available(MMST4401). Ultar-small surface mount package. Marking:K3T MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage V CBO -40 V Collector-Emitter Voltage V CEO -40 V Emitter-Base Voltage V EBO -5 V Collector Current -Continuous I C -600 mA Collector Power Dissipation PC 200 mW Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC=-100μA,IE=0 -40 V Collector-emitter breakdown voltage VCEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage VEBO IE=-100μA,IC=0 -5 V Collector cut-off current ICEX VCE=-35V,VEB(OFF)=-0.4V -0.1 μA Base cut-off current IBL VCE=-35V,VEB(OFF)=-0.4V -0.1 μA DC current gain hFE VCE=-1V,IC=-0.1mA VCE=-1V,IC=-1.0mA VCE=-1V,IC=-10mA VCE=-2V,IC=-150mA VCE=-2V,IC=500mA 30 60 100 100 20 300 Collector-emitter saturation voltage VCE(sat) IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA -0.4 -0.75 V Base-emitter saturation voltage VBE(sat) IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA -0.95 -1.3 V Transition frequency fT VCE=-10V,IC= -1.0mA, f=1.0kHz 200 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 8.5 pF Delay time Td VCC=-30V,VBE(off)=-2V, IC=-150mA,IB1=-15mA 15 nS Rise time tr 20 nS Storage time ts VCC=-30V,IC=-150mA, IB1=IB2=-15mA 225 nS Fall time tf 30 nS MMST4403 (PNP) 1. BASE 2. EMITTER SOT-323 3. COLLECTO |
Ähnliche Teilenummer - MMST4403 |
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Ähnliche Beschreibung - MMST4403 |
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