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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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MMST2222A Datenblatt(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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MMST2222A Datenblatt(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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1 / 2 page  Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FEATURES Epitaxial planar die construction Complementary PNP Type available(MMST2907A) Marking:K3P MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage V CBO 75 V Collector-Emitter Voltage V CEO 40 V Emitter-Base Voltage V EBO 6 V Collector Current -Continuous I C 600 mA Collector Power Dissipation PC 200 mW Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 10μA, IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 6 V Collector cut-off current ICBO VCB=70 V, IE=0 100 nA Collector cut-off current ICEO VCE=35V , IB=0 100 nA Emitter cut-off current IEBO VEB= 3V , IC=0 100 nA DC current gain hFE(1) VCE=10V, IC=0.1mA 35 hFE(2) VCE=10V, IC= 1mA 50 hFE(3) VCE=10V, IC= 10mA 75 hFE(4) VCE=10V, IC= 150mA 100 300 hFE(5) VCE=10V, IC= 500mA 40 hFE(6) VCE=1V, IC= 150mA 35 Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA IC=150 mA, IB=15mA 1 0.3 V Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA IC=150 mA, IB=15mA 2.0 1.2 V Transition frequency fT VCE=20V, IC= 20mA f=100MHz 300 MHz Output Capacitance Cob VCB=10V, IE= 0,f=1MHz 8 pF Delay time td VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA 10 nS Rise time tr 25 nS Storage time tS VCC=30V, IC=150mA IB1=-IB2=15mA 225 nS Fall time tf 60 nS MMST2222A (NPN) 1. BASE 2. EMITTER SOT-323 3. COLLECTO |
Ähnliche Teilenummer - MMST2222A |
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Ähnliche Beschreibung - MMST2222A |
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