| Datenblatt-Suchmaschine für elektronische Bauteile |
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NE592D8G. Datenblatt(PDF) 2 Page - ON Semiconductor |
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NE592D8G. Datenblatt(HTML) 2 Page - ON Semiconductor |
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2 / 10 page ![]() NE592 www.onsemi.com 2 PIN CONNECTIONS 1 2 3 45 6 7 8 1 2 3 4 5 6 78 14 13 12 11 10 9 INPUT 1 NC G2A GAIN SELECT G1A GAIN SELECT V+ NC OUTPUT 1 INPUT 2 NC G2B GAIN SELECT G1B GAIN SELECT V‐ NC OUTPUT 2 INPUT 2 V‐ OUTPUT 2 INPUT 1 V+ OUTPUT 1 G1A GAIN SELECT G1B GAIN SELECT SOIC-14 SOIC-8 (Top View) (Top View) MAXIMUM RATINGS (TA = +25°C, unless otherwise noted.) Rating Symbol Value Unit Supply Voltage VCC "8.0 V Differential Input Voltage VIN "5.0 V Common-Mode Input Voltage VCM "6.0 V Output Current IOUT 10 mA Operating Ambient Temperature Range TA 0 to +70 °C Operating Junction Temperature TJ 150 °C Storage Temperature Range TSTG 65 to +150 °C Maximum Power Dissipation, TA = 25°C (Still Air) (Note 1) SOIC-14 Package SOIC-8 Package PD MAX 0.98 0.79 W Thermal Resistance, Junction−to−Ambient SOIC-14 Package SOIC-8 Package RqJA 145 182 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Derate above 25 °C at the following rates: SOIC-14 package at 6.9 mW/ °C SOIC-8 package at 5.5 mW/ °C |
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