| Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC3198 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC3198 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Transistor 2SC3198 DESCRIPTION · High DC Current Gain-hFE=70-700@IC = 2mA · Excellent hFE Linearity · Excellent Safe Operating Area · Low Noise · Complement to Type 2SA1266 · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Low Frequency Amplifiers. · Low Noise Amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Curren 150 mA PC Collector Power Dissipation @TC=25℃ 400 mW TJ Junction Temperature 125 ℃ Tstg Storage Temperature Range -55~125 ℃ |
Ähnliche Teilenummer - 2SC3198 |
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Ähnliche Beschreibung - 2SC3198 |
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