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MJB42C Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MJB42C Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor MJB42C DESCRIPTION · Lead formed for surface mount applications(NO suffix) · Electrically the same as TIP42 series · Pb-free package are available · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · General purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICP Collector Current-Pulse -10 A IB Base Current -2 A PC Total Power Dissipation @ Ta=25℃ 2 W PC Total Power Dissipation @ TC=25℃ 65 W TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ |
Ähnliche Teilenummer - MJB42C |
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Ähnliche Beschreibung - MJB42C |
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