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MJD47 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer MJD47
Bauteilbeschribung  isc Silicon NPN Power Transistors
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJD47 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website： www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistors
MJD4
7
DESCRIPTION
·
DC Current Gain -hFE = 30~150@ IC= 0.3A
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 250V(Min)
·
DPAK for Surface Mount Applications
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·
Designed for line operated audio output amplifier,switchmode
power supply drivers and other switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
350
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.0
A
ICM
Collector Current-Peak
2.0
A
IB
Base Current
0.6
A
PD
Collector Power Dissipation
TC=25℃
15
W
Collector Power Dissipation
Ta=25℃
1.56
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
8.33
℃
/W
Rth j-a
Thermal Resistance,Junction to Ambient
80
℃
/W


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