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MJ16110 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited

Teilenummer MJ16110
Bauteilbeschribung  isc Silicon NPN Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJ16110 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
MJ16110
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 20mA; IB=0
400
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC=5A ;IB=0.5A
0.9
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 10A ;IB= 1.2A
2.0
V
VCE(sat)-3
Collector-Emitter Saturation Voltage
IC= 10A ;IB= 2A
IC= 10A ;IB= 2A;TC=100℃
1.0
1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 10A ;IB= 2A
IC= 10A ;IB= 2A;TC=100℃
1.5
1.5
V
ICBO
Collector Cutoff Current
VCBO=650V,IE=0;
VCBO=650V,IE=0;TC=100℃
0.1
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
10
μ
A
hFE
DC Current Gain
IC= 15A; VCE=5V
6
20
COB
Collector Capacitance
IE= 0; f=1kHz ; VCB=10V
400
pF
Switching Times ; Resistive Load
td
Delay Time
IC= 10A; IB1= 1A;IB2= 2A
VCC= 250V ,RB2= 4Ω
PW= 30μs
Duty Cycle≤2%
15
ns
tr
Rise Time
330
ns
ts
Storage Time
800
ns
tf
Fall Time
110
ns



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