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BDY26C Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited

Teilenummer BDY26C
Bauteilbeschribung  isc Silicon NPN Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDY26C Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited

  BDY26C Datasheet HTML 1Page - Inchange Semiconductor Company Limited BDY26C Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
2
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Silicon NPN Power Transistors
BDY26C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 50mA; IB= 0
180
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
300
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 2A; IB= 0.25A
0.6
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 2A; IB= 0.25A
1.2
V
ICES
Collector Cutoff Current
VCE= 250V; VBE= 0
1.0
mA
ICEO
Collector Cutoff Current
VCE= 180V; IB= 0
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
1.0
mA
hFE
DC Current Gain
IC= 2A; VCE= 4V
75
180
fT
Current Gain-Bandwidth Product
IC= 0.5A; VCE= 15V; f=10MHz
10
MHz
Switching Times
ton
Turn-On Time
IC= 5A; IB= 1A
1
μ
s
toff
Turn-Off Time
IC= 5A; IB1= 1A; IB2= -0.5A
6
μ
s



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