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2SD426 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer 2SD426
Bauteilbeschribung  isc Silicon NPN Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD426 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistors
2SD426
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·
High Power Dissipation-
: PC= 100W(Max)@TC=25℃
·
Complement to Type 2SB556
APPLICATIONS
·
Designed for power amplifier applications.
·
Recommended for high-fidelity audio frequency amplifier
output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
IE
Emitter Current-Continuous
12
A
PC
Collector Power Dissipation
@TC=25℃
100
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150
℃


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