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2SD1509 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1509 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification 2 isc website: www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1509 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A, IB= 1mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A, IB= 1mA 2.0 V ICBO Collector Cutoff Current VCB= 80V, IE= 0 10 uA IEBO Emitter Cutoff Current VEB=8V; IC= 0 4.0 mA hFE-1 DC Current Gain IC= 1A; VCE= 2V 2000 COB Output Capacitance IE= 0; VCB= 10V, f= 0.1MHz 20 pF |
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