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2N4348 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer 2N4348
Bauteilbeschribung  isc Silicon NPN Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N4348 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
2N4348
DESCRIPTION
·
Excellent Safe Operating Area
·
Low Collector-Emitter Saturation Voltage
·
The device employs the popular JEDEC TO-3
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·
High voltage high current power transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.46
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
140
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
PC
Collector Power Dissipation@TC=25℃
120
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃


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